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Cross-sectional TEM analysis of (a) NiSi NCs embedded in oxide layer, and (b) NiSi NCs embedded in nitride layer. hysteresis of memory structure with (c) NiSi NCs embedded in oxide layer and (d) NiSi NCs embedded in nitride layer. The memory windows of (c) 2.0 and (d) can be obtained under gate voltage operation, respectively.
Retention of the NC memory structure embedded in (a) oxide (charge holding rate: 50%) and (b) nitride layers (charge holding rate: 66%). The dotted line is the extrapolated value of retention data after , which this range is a steady state.
Endurance characteristics of the NC memory structure embedded in (a) oxide and (b) nitride layers. Pulses condition of for .
Simulation of electric field distribution of NiSi NCs embedded in (a) oxide and (b) nitride layers. The red line/black line of the inset is a distribution of vertical electric field across a single NC/without any NCs. The dielectric constants of and SiN were given to be 3.9 and 7.5, respectively.
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