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Strain and composition mapping of epitaxial nanostructures
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10.1063/1.2908214
/content/aip/journal/apl/92/15/10.1063/1.2908214
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/15/10.1063/1.2908214
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

AFM scan of the sample surface (a) before ( height scale) and (b) after sputtering ( height scale); (c) height profile along the line marked in (b); (d) schematic representing different regions of an island.

Image of FIG. 2.
FIG. 2.

Measured data (blue) and final result (red) for rods (a) and (b) ; (c) [110] section of the 3D ED across the film-substrate interface. In accord with the crystallographic structure of the sample, only two of every four atoms are visible in this section.

Image of FIG. 3.
FIG. 3.

(a) Vertical profile through the total ED (black) and fractional occupancy calculated from group V profile (red). The ED indicates the presence of three separate regions: substrate, WL and 3D islands; The inset presents the square root of the fractional occupancy as a function of the vertical position. (b) Profile of the out-of-plane monolayer spacing value.

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/content/aip/journal/apl/92/15/10.1063/1.2908214
2008-04-18
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strain and composition mapping of epitaxial nanostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/15/10.1063/1.2908214
10.1063/1.2908214
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