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Sb-doped -doped homojunction ultraviolet light emitting diodes
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10.1063/1.2908968
/content/aip/journal/apl/92/15/10.1063/1.2908968
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/15/10.1063/1.2908968
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Semi-logarithmic scale characteristics of the -type Sb-doped -type Ga-doped ZnO homojunction. Inset (a) shows the surface contacts and contacts curves, respectively. Ohmic contacts behaviors are evident. Inset (b) gives the intercontact resistance as a function of intercontact distance for on -type ZnO layers. Linear fitting was used to obtain the specific contact resistivity.

Image of FIG. 2.
FIG. 2.

Temperature dependent EL spectra of homojunction diode from under injection current of . The spectra are shifted on scale for clarity. Inset shows the NBE peak positions as hollow circles against different temperatures and Varshni fitting is expressed as solid line.

Image of FIG. 3.
FIG. 3.

Room temperature EL spectra at different injection current from .

Image of FIG. 4.
FIG. 4.

Room temperature PL spectra from Sb-doped -type ZnO layer and Ga-doped -type ZnO layer of the homojunction sample.

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/content/aip/journal/apl/92/15/10.1063/1.2908968
2008-04-14
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Sb-doped p-ZnO∕Ga-doped n-ZnO homojunction ultraviolet light emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/15/10.1063/1.2908968
10.1063/1.2908968
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