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Semi-logarithmic scale characteristics of the -type Sb-doped -type Ga-doped ZnO homojunction. Inset (a) shows the surface contacts and contacts curves, respectively. Ohmic contacts behaviors are evident. Inset (b) gives the intercontact resistance as a function of intercontact distance for on -type ZnO layers. Linear fitting was used to obtain the specific contact resistivity.
Temperature dependent EL spectra of homojunction diode from under injection current of . The spectra are shifted on scale for clarity. Inset shows the NBE peak positions as hollow circles against different temperatures and Varshni fitting is expressed as solid line.
Room temperature EL spectra at different injection current from .
Room temperature PL spectra from Sb-doped -type ZnO layer and Ga-doped -type ZnO layer of the homojunction sample.
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