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Nonvolatile memory with molecule-engineered tunneling barriers
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10.1063/1.2911741
/content/aip/journal/apl/92/15/10.1063/1.2911741
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/15/10.1063/1.2911741
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematics of heterogeneous gate stacks (S1–S5) examined in this work. Energy band/level diagram representation of tunneling barriers with (b) resonant tunneling through under high electric field and (c) direct tunneling through under low electric field.

Image of FIG. 2.
FIG. 2.

Measured tunneling current through S1 with a evaporated barrier and S2 with a evaporated barrier. The dash lines are calculated from the WKB approximation for and .

Image of FIG. 3.
FIG. 3.

High frequency sweeps with increasing range from for memory cells without the Au NC layer (S3) and with the Au NC layer (S4). Both S3 and S4 are with the -embedded tunneling barrier.

Image of FIG. 4.
FIG. 4.

Retention and P/E characteristics of metal NC memories, S4 with a composite barrier of evaporated and S5 with a single layer of . For consistent initial conditions, the preset bias prior to the retention and P/E measurements is for .

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/content/aip/journal/apl/92/15/10.1063/1.2911741
2008-04-15
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nonvolatile memory with molecule-engineered tunneling barriers
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/15/10.1063/1.2911741
10.1063/1.2911741
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