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Negative bias temperature instability and relaxation in HfSiON gate stack field effect devices
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10.1063/1.2912025
/content/aip/journal/apl/92/15/10.1063/1.2912025
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/15/10.1063/1.2912025
/content/aip/journal/apl/92/15/10.1063/1.2912025
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/content/aip/journal/apl/92/15/10.1063/1.2912025
2008-04-18
2014-07-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Negative bias temperature instability and relaxation in HfSiON gate stack field effect devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/15/10.1063/1.2912025
10.1063/1.2912025
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