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Inversion mode -channel GaAs field effect transistor with high-/metal gate
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10.1063/1.2912027
/content/aip/journal/apl/92/15/10.1063/1.2912027
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/15/10.1063/1.2912027
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Capacitance voltage measurements of metal insulator capacitor at frequencies of 0.1, 1, 10, and in the dark (a) and with illuminated periphery (b). The capacitor area is .

Image of FIG. 2.
FIG. 2.

dc output characteristics of -channel GaAs MOSFET. The channel length is , the channel width is , and the equivalent oxide thickness is .

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/content/aip/journal/apl/92/15/10.1063/1.2912027
2008-04-16
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Inversion mode n-channel GaAs field effect transistor with high-k/metal gate
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/15/10.1063/1.2912027
10.1063/1.2912027
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