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Fabrication and characteristics of ultrashort-channel carbon nanotube field-effect transistors
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10.1063/1.2912128
/content/aip/journal/apl/92/15/10.1063/1.2912128
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/15/10.1063/1.2912128
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic illustration of the fabrication of a nanogap. The nanowire sandwiched between the two layers of polymethyl methacrylate (PMMA) acts as a shadow mask in the metal evaporation. (b) Preferentially oriented nanowires on PMMA.

Image of FIG. 2.
FIG. 2.

(a) SEM micrograph of a suspended nanowire covered with chromium. A nanogap is formed underneath the nanowire. (b) and (c) show the SEM micrographs of two nanogaps with 12 and width, respectively. (d) A carbon nanotube is embedded in the nanogap electrodes.

Image of FIG. 3.
FIG. 3.

(a) Schematic illustration of an ultrashort-channel CNTFET with nanogap defined by a mask. (b) AFM image of the device. (c) curves of an ultrashortchannel CNTFET (VD5). The gate voltage varies from (top) to (bottom) with steps. The inset shows the transfer characteristics at .

Image of FIG. 4.
FIG. 4.

(a) Schematic illustration of an ultrashort-channel CNTFET with nanogap defined by a small nanotube bundle. (b) AFM image of the device. (c) curves of an ultrashort-channel CNTFET (SD10). The gate voltage varies from (top) to (bottom) with steps. The inset shows the transfer characteristics at .

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/content/aip/journal/apl/92/15/10.1063/1.2912128
2008-04-17
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fabrication and characteristics of ultrashort-channel carbon nanotube field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/15/10.1063/1.2912128
10.1063/1.2912128
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