1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
f
Transport properties of organic field effect transistors modified by quantum dots
Rent:
Rent this article for
Access full text Article
/content/aip/journal/apl/92/15/10.1063/1.2912345
1.
1.G. Horowitz, J. Mater. Res. 19, 1946 (2004).
http://dx.doi.org/10.1557/JMR.2004.0266
2.
2.O. D. Jurchescu, J. Baas, and T. T. M. Palstra, Appl. Phys. Lett. 84, 3061 (2004).
http://dx.doi.org/10.1063/1.1704874
3.
3.S. Verlaak, V. Arkipov, and P. Heremans, Appl. Phys. Lett. 82, 745 (2003).
http://dx.doi.org/10.1063/1.1541112
4.
4.E. M. Muller and J. A. Marohn, Adv. Mater. (Weinheim, Ger.) 17, 1410 (2005).
http://dx.doi.org/10.1002/adma.200401174
5.
5.R. A. Street, D. Knipp, and A. R. Völkel, Appl. Phys. Lett. 80, 1658 (2002).
http://dx.doi.org/10.1063/1.1456549
6.
6.D. Knipp, R. A. Street, and A. R. Völkel, Appl. Phys. Lett. 82, 3907 (2003).
http://dx.doi.org/10.1063/1.1578536
7.
7.L.-L. Chua, P. K. H. Ho, H. Sirringhaus, and R. H. Friend, Adv. Mater. (Weinheim, Ger.) 16, 1609 (2004).
http://dx.doi.org/10.1002/adma.200400392
8.
8.T. Yasuda, K. Fujita, H. Nakashima, and T. Tsutsui, Jpn. J. Appl. Phys., Part 1 42, 6614 (2003).
http://dx.doi.org/10.1143/JJAP.42.6614
9.
9.J. Veres, S. D. Ogier, S. W. Leeming, D. C. Cupertino, and S. M. Khaffaf, Adv. Funct. Mater. 13, 199 (2003).
http://dx.doi.org/10.1002/adfm.200390030
10.
10.A. F. Stassen, R. W. I. de Boer, N. N. Iosad, and A. F. Morpurgo, Appl. Phys. Lett. 85, 3899 (2004).
http://dx.doi.org/10.1063/1.1812368
11.
11.I. N. Hulea, S. Fratini, H. Xie, C. L. Mulder, N. N. Iossad, G. Rastelli, S. Ciuchi, and A. F. Morpurgo, Nat. Mater. 5, 982 (2006).
http://dx.doi.org/10.1038/nmat1774
12.
12.H. Sakaki, G. Yusa, T. Someya, Y. Ohno, T. Noda, H. Akiyama, Y. Kadoya, and H. Noge, Appl. Phys. Lett. 67, 3444 (1995).
http://dx.doi.org/10.1063/1.115274
13.
13.A. A. Zhukov, Ch. Weichsel, S. Beyer, S. Schnüll, Ch. Heyn, and W. Hansen, Phys. Rev. B 67, 125310 (2003).
http://dx.doi.org/10.1103/PhysRevB.67.125310
14.
14.W. Cai, H. Zhnog, and L. Zhang, J. Appl. Phys. 83, 1705 (1998).
http://dx.doi.org/10.1063/1.366888
15.
15.R. A. Laudise, Ch. Kloc, P. G. Simpkins, and T. Siegrist, J. Cryst. Growth 187, 449 (1998).
http://dx.doi.org/10.1016/S0022-0248(98)00034-7
16.
16.J. H. Kang, D. da Silva Filho, J.-L. Bredas, and X.-Y. Zhu, Appl. Phys. Lett. 86, 152115 (2005).
http://dx.doi.org/10.1063/1.1900944
17.
17.Y. Yin, Z.-Y. Li, Z. Zhong, B. Gates, Y. Xia, and S. Venkateswaran, J. Mater. Chem. 12, 522 (2002).
18.
18.M. F. Calhoun, C. Hsieh, and V. Podzorov, Phys. Rev. Lett. 98, 096402 (2007).
http://dx.doi.org/10.1103/PhysRevLett.98.096402
19.
19.Y. Chen and A. M. Goldman, Appl. Phys. Lett. 91, 063119 (2007).
http://dx.doi.org/10.1063/1.2768891
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/15/10.1063/1.2912345
Loading
/content/aip/journal/apl/92/15/10.1063/1.2912345
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/92/15/10.1063/1.2912345
2008-04-17
2014-12-23

Abstract

We have investigated the transport properties of organic field effect transistors (OFETs) with quantum dot layers between the organic semiconductor and the dielectric. An insulating dot layer changes the properties of OFETs, suggesting that OFET mobility will always be reduced by additional physical disorder. However, a metal dot layer causes a much larger reduction of the mobility and an increase of the activation energy. This phenomenon may be explained by more charge being induced on metal dots causing the carriers to be more localized.

Loading

Full text loading...

/deliver/fulltext/aip/journal/apl/92/15/1.2912345.html;jsessionid=15uinfyr9d31l.x-aip-live-02?itemId=/content/aip/journal/apl/92/15/10.1063/1.2912345&mimeType=html&fmt=ahah&containerItemId=content/aip/journal/apl
true
true
This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Transport properties of organic field effect transistors modified by quantum dots
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/15/10.1063/1.2912345
10.1063/1.2912345
SEARCH_EXPAND_ITEM