1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Effective passivation of slow interface states at the interface of single crystalline and Si(100)
Rent:
Rent this article for
USD
10.1063/1.2912523
/content/aip/journal/apl/92/15/10.1063/1.2912523
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/15/10.1063/1.2912523
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) characteristics of single crystalline on Si(100) substrate with Pt as top electrode. (b) Normalized characteristics of single crystalline on Si(100) substrate with W as top electrode.

Image of FIG. 2.
FIG. 2.

Hysteresis characteristics of single crystalline on Si(100) substrate after forming gas annealed at for with W as top electrode. is stabilized at . Only sweep 1 is shown for clarity.

Image of FIG. 3.
FIG. 3.

(a) characteristics of single crystalline on Si(100) with forming gas annealing at for before and after Pt deposition. is stabilized at . (b) The hysteresis of structure with forming gas annealing before Pt deposition.

Image of FIG. 4.
FIG. 4.

(a) characteristics of single crystalline on Si(100) with proper process optimization. (b) Equivalent parallel conductance estimated from measured conductance as a function of frequency at .

Loading

Article metrics loading...

/content/aip/journal/apl/92/15/10.1063/1.2912523
2008-04-18
2014-04-24
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effective passivation of slow interface states at the interface of single crystalline Gd2O3 and Si(100)
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/15/10.1063/1.2912523
10.1063/1.2912523
SEARCH_EXPAND_ITEM