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Effect of pressure on the properties of phosphorus-doped -type ZnO thin films grown by radio frequency-magnetron sputtering
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10.1063/1.2913011
/content/aip/journal/apl/92/16/10.1063/1.2913011
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/16/10.1063/1.2913011

Figures

Image of FIG. 1.
FIG. 1.

SEM images of P-doped ZnO thin films grown on the thick ZnO buffer layer under working pressures of (a) , (b) , (c) , and (d) .

Image of FIG. 2.
FIG. 2.

Low temperature PL spectra of P-doped ZnO thin films grown under working pressures of (a) , (b) , (c) , and (d) .

Image of FIG. 3.
FIG. 3.

The FWHM of theta rocking (002) reflections of the phosphorus-doped ZnO thin films grown under working pressures of .

Tables

Generic image for table
Table I.

Growth condition and room temperature for electrical properties of phosphorus-doped ZnO films before and after the RTA process.

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/content/aip/journal/apl/92/16/10.1063/1.2913011
2008-04-22
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of pressure on the properties of phosphorus-doped p-type ZnO thin films grown by radio frequency-magnetron sputtering
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/16/10.1063/1.2913011
10.1063/1.2913011
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