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Near-infrared absorption and semimetal-semiconductor transition in ErAs nanoparticles embedded in GaAs and AlAs
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10.1063/1.2908213
/content/aip/journal/apl/92/17/10.1063/1.2908213
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/17/10.1063/1.2908213
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Main) Absorption data for GaAs–ErAs grown at vs ErAs volume fraction. (Inset) Peak absorption coefficient vs ErAs volume fraction with best-fit linear trendline.

Image of FIG. 2.
FIG. 2.

Absorption data for 3.2% ErAs in (a) GaAs and (b) AlAs for different deposition temperatures. The data for AlAs–ErAs layers exhibit Fabry–Perot oscillations.

Image of FIG. 3.
FIG. 3.

Schematic band diagrams (a) before and (b) after accounting for quantum confinement in a nanoparticle assuming the GaAs barrier. Regions with continuous density of states are shaded.

Image of FIG. 4.
FIG. 4.

Experimental peak absorption energy vs TEM-determined ErAs nanoparticle size for 3.2% ErAs in GaAs. Predictions of the GaAs and minima models are shown by solid and dashed lines, respectively.

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/content/aip/journal/apl/92/17/10.1063/1.2908213
2008-05-01
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Near-infrared absorption and semimetal-semiconductor transition in 2nm ErAs nanoparticles embedded in GaAs and AlAs
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/17/10.1063/1.2908213
10.1063/1.2908213
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