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On the origin of photoluminescence in indium oxide octahedron structures
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View: Figures


Image of FIG. 1.
FIG. 1.

SEM micrographs of (a) sample A and (b) sample C. Both samples A and C contain truncated octahedron structures. The inset show high magnified images. (c) and (d) show the high resolution TEM of samples A and C, respectively with their TEM micrographs in the inset.

Image of FIG. 2.
FIG. 2.

(a) PL spectra of IO samples deposited for different time. Sample A has six times higher PL intensity than the sample C without any peak shift. (b) Raman spectra of IO samples. Raman shift at is sensitive to the oxygen vacancies and more asymmetric in the sample C. Inset: representative Raman spectra of sample C. (c) The EPR spectra of samples A and C. Sample A does not show any EPR signal while sample C shows a strong EPR signal. (d) PL spectra of sample C heated at for in presence of a constant electric field of . The PL intensity is found to increase at cathode side (curve 1) while it decreases at anode side (curve 2) with respect to the pristine sample A (curve A). Inset shows the schematic of sample annealed in presence of an electric field. The A, B, and C in figures denoted the samples A, B, and C, respectively.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: On the origin of photoluminescence in indium oxide octahedron structures