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An evaluation of thermal stability of metal gate on Hf silicate for -channel metal oxide semiconductor application
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10.1063/1.2913766
/content/aip/journal/apl/92/17/10.1063/1.2913766
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/17/10.1063/1.2913766
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) characteristics at of the MOS device with gate on Hf-silicate film with at different annealing temperatures. (b) The vs EOT plots for the gate after different annealings. The inset shows with consideration of interface.

Image of FIG. 2.
FIG. 2.

AES depth profiles of -silicate/Si MOS structure as a function of annealing temperature.

Image of FIG. 3.
FIG. 3.

HRTEM images of -silicate stack at as-deposited state and after annealing at under atmosphere.

Image of FIG. 4.
FIG. 4.

(a) EOT vs leakage current density plot at for gates on Hf-silicate dielectric of different annealing temperatures. The Inset shows the hysteresis of -silicate/Si MOS capacitors as a function of annealing temperature.

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/content/aip/journal/apl/92/17/10.1063/1.2913766
2008-05-01
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: An evaluation of thermal stability of TiB2 metal gate on Hf silicate for p-channel metal oxide semiconductor application
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/17/10.1063/1.2913766
10.1063/1.2913766
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