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Potential barriers to electron carriers in field-effect transistors
1.C. D. Dimitrakopoulos and D. J. Mascaro, IBM J. Res. Dev. 45, 11 (2001).
5.K. Itaka, M. Yamashiro, J. Yamaguchi, M. Haemori, S. Yaginuma, Y. Matsumoto, M. Kondo, and H. Koinuma, Adv. Mater. (Weinheim, Ger.) 18, 1713 (2006).
11.Y. Matsuoka, K. Uno, N. Takahashi, A. Maeda, N. Inami, E. Shikoh, Y. Yamamoto, H. Hori, and A. Fujiwara, Appl. Phys. Lett. 89, 173510 (2006).
12.N. Takahashi, A. Maeda, K. Uno, E. Shikoh, Y. Yamammoto, H. Hori, Y. Kubozono, and A. Fujiwara, Appl. Phys. Lett. 90, 083503 (2007).
13.T. Nagano, M. Tsutsui, R. Nouchi, N. Kawasaki, Y. Ohta, Y. Kubozono, N. Takahashi, and A. Fujiwara, J. Phys. Chem. C 111, 7211 (2007).
16.N. Kawasaki, T. Nagano, Y. Kubozono, Y. Sako, Y. Morimoto, Y. Takaguchi, A. Fujiwara, C.-C. Chu, and T. Imae, Appl. Phys. Lett. 91, 243515 (2007).
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Transport properties of field-effect transistors(FETs) have been investigated in the temperature range between 160 and . Activation energy was estimated from temperature dependence of resistance at the linear region and of current at the saturation region for various channel lengths. Variation of activation energy values is attributed to carrier injection barrier at contact between source electrode and channel, and barriers to carrier hopping between trap states in the channel of .
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