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Potential barriers to electron carriers in field-effect transistors
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/content/aip/journal/apl/92/17/10.1063/1.2917469
2008-04-28
2014-10-23

Abstract

Transport properties of field-effect transistors(FETs) have been investigated in the temperature range between 160 and . Activation energy was estimated from temperature dependence of resistance at the linear region and of current at the saturation region for various channel lengths. Variation of activation energy values is attributed to carrier injection barrier at contact between source electrode and channel, and barriers to carrier hopping between trap states in the channel of .

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Scitation: Potential barriers to electron carriers in C60 field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/17/10.1063/1.2917469
10.1063/1.2917469
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