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Indium stability on InGaAs during atomic H surface cleaning
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View: Figures


Image of FIG. 1.
FIG. 1.

Normalized XPS spectra for 45° and 75° take-off angles for Ga and In core levels for (a) InGaAs native oxide and (b) after annealing plus an atomic H treatment at for . The inset shows the normalized O XPS component from the native oxide for 45° and 75° take-off angles. The O component at belongs to O–As bonds while the component at belongs to the O–Ga and O–In bonds.

Image of FIG. 2.
FIG. 2.

XPS spectra peak fits of (a) Ga , In , and (b) As regions for native oxide (bottom), plus annealing in UHV (middle bottom), plus of AHT at , (middle top) and plus of AHT at (top). (a) Bottom and top plots correspond to the 45° take-off data shown in Fig. 1. The broad shaded features in (a) are associated with Ga and In oxides. As from the InGaAs native oxide shows and chemical components associated with and , respectively.

Image of FIG. 3.
FIG. 3.

(a) XPS intensity ratios for In , Ga , and As species in the InGaAs substrate for the several steps indicated in Fig. 2. Even though the XPS intensity ratios are not normalized with the atomic sensitivity factors, the trend of these ratios are closely related to the atomic concentration changes in the sample. The intensity ratio error bars that include the experimental and analysis errors are less than and are within the size of the data symbols in this plot. (b) RHEED patterns of azimuths and [110] showing a sharp surface reconstruction (As rich) after of AHT at . Solid symbols: ; open symbols: .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Indium stability on InGaAs during atomic H surface cleaning