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Transport properties in field-effect transistor with a single Schottky barrier
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/content/aip/journal/apl/92/17/10.1063/1.2919799
2008-05-02
2015-03-04

Abstract

field-effect transistor(FET) has been fabricated with a single Schottky barrier formed by an insertion of 1-dodecanethiol at the interface between the active layer and the gate dielectric. The suppression of drain current is observed at low drain-source voltage, showing a formation of the carrier injection barrier. Furthermore, a clear difference between forward and reverse drain currents is observed in the FET in a high temperature region, showing that this FET device is close to an ideal single Schottky diode. The quantitative analysis for carrier injection barrier has been achieved with thermionic emission model for a single Schottky barrier.

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Scitation: Transport properties in C60 field-effect transistor with a single Schottky barrier
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/17/10.1063/1.2919799
10.1063/1.2919799
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