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Calculated depth profiles of oxygen and the corresponding distributions of excess vacancies and excess interstitials are shown for silicon implanted with (dose in the ED window). The abrupt junction from to is marked by . The position indicates the interface of the finally formed buried oxide layer (hatched ) and is the thickness of the BOX.
Oxygen depth profiles and the profiles of excess vacancies and excess interstitials for oxygen implants in the ED window into silicon. Calculations were performed for implantation with ion energies of 80 and to doses of and , respectively. These implantation parameters according to the ED data given in Ref. 7 satisfy the relation . The corresponding position of the BOX is indicated. The arrows show the O concentration level at which is approximately constant for all ED window implantations: .
Comparison of the calculated ED window with experimental results. The thin curve below shows the oxygen dose required for a maximum O concentration of . The ED window is the distance between both thick lines which were calculated for the conditions and . Experimental results for the ED window (rhombs) are taken from Ref. 7. Other experimental data are also included. Figures in brackets indicate the references.
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