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Silicon-germanium interdiffusion in high-germanium-content epitaxial heterostructures
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10.1063/1.2917798
/content/aip/journal/apl/92/18/10.1063/1.2917798
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/18/10.1063/1.2917798
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Ge SIMS depth profile from a superlattice grown on a buffer layer on Si (001).

Image of FIG. 2.
FIG. 2.

Typical symmetric diffraction pattern about the (004) Bragg reflection of the superlattice grown on a relaxed buffer layer. The inset is a (113) reciprocal space map showing that the superlattice is strained to the relaxed buffer layer.

Image of FIG. 3.
FIG. 3.

(a) Experimentally measured superlattice satellite decay rates as a function of annealing time at several temperatures for a sample with an average composition of Ge; (b) Arrhenius plot for the interdiffusivity data extracted from the satellite decay rates.

Image of FIG. 4.
FIG. 4.

Plot summarizing the reported activation enthalpy results for Si–Ge interdiffusion at various alloy compositions. All alloy film samples had symmetric or nearly symmetric nominal strain states. Results shown were obtained in the present work or were reported in Refs. 8, 10, and 13–16.

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/content/aip/journal/apl/92/18/10.1063/1.2917798
2008-05-09
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Silicon-germanium interdiffusion in high-germanium-content epitaxial heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/18/10.1063/1.2917798
10.1063/1.2917798
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