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Controlling the temperature coefficient of resistance and resistivity in thin films by the intermixing ratios between and
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10.1063/1.2918989
/content/aip/journal/apl/92/18/10.1063/1.2918989
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/18/10.1063/1.2918989

Figures

Image of FIG. 1.
FIG. 1.

Variation of (a) the resistivity and (b) TCR values of the thin films depending on intermixing ratios. Temperatures were varied from .

Image of FIG. 2.
FIG. 2.

XRD patterns of thin films depending on intermixing ratios. The scan axis was mode and the scanning rate was .

Image of FIG. 3.
FIG. 3.

Plan-view HRTEM images with SADPs of (a) sample B, (b) sample E, (c) sample F, and (d) pure thin films.

Image of FIG. 4.
FIG. 4.

Variations in (a) TCR values and (b) XRD patterns of , pure , and TaN thin films depending on the annealing temperatures. The annealing time was fixed at regardless of annealing temperature. The symbols of ▼, ●, and ◆ denote the phases of , , and TaN, respectively.

Tables

Generic image for table
Table I.

Summary of supercycle design for the preparation of thin films.

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/content/aip/journal/apl/92/18/10.1063/1.2918989
2008-05-06
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Controlling the temperature coefficient of resistance and resistivity in RuO2–TiO2 thin films by the intermixing ratios between RuO2 and TiO2
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/18/10.1063/1.2918989
10.1063/1.2918989
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