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Stress-induced morphology and fine-line stability enhancement of NiSi on poly-SiGe with a buffer polycrystalline silicon interlayer
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10.1063/1.2920202
/content/aip/journal/apl/92/18/10.1063/1.2920202
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/18/10.1063/1.2920202
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Figures

Image of FIG. 1.
FIG. 1.

(a) Sheet resistances of the nickel (germano)silicide films formed on poly-Si [sample (i)], poly-SiGe [sample (ii)], and poly-Si/poly-SiGe stack layers [sample (iii)] as a function of the annealing temperature. (b) Sheet resistances of the nickel [germano]silicide lines annealed at as a function of the linewidth.

Image of FIG. 2.
FIG. 2.

Cross-sectional TEM micrographs of the nickel (germano)silicide films formed on (a) poly-Si [sample (i)], (b) poly-SiGe [sample (ii)], and (c) poly-Si/poly-SiGe stack layers [sample (iii)] after annealing at .

Image of FIG. 3.
FIG. 3.

Schematic models of nickel (germano)silicide formation at high annealing temperatures: (a) on poly-Si [sample (i)] and poly-SiGe [sample (ii)] and (b) on poly-Si/poly-SiGe stack layers [sample (iii)].

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/content/aip/journal/apl/92/18/10.1063/1.2920202
2008-05-09
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Stress-induced morphology and fine-line stability enhancement of NiSi on poly-SiGe with a buffer polycrystalline silicon interlayer
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/18/10.1063/1.2920202
10.1063/1.2920202
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