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(a) Bright-field TEM cross-sectional micrograph of a SRN/Si-SL structure. (b) High-resolution image of the rectangular region marked in (a) showing amorphous Si nc in the SRN layers, some of which are marked by arrows.
(a) PL spectra for SRN/Si-SL (squares) and reference homogeneous SRN (circles) samples annealed at for . Both the PL spectra are excited at with optical power. (b) decay time of SRN/Si-SL (squares) and reference homogeneous SRN (circles) samples measured at different wavelengths.
(a) Typical PL spectra of Er:SRN/Si-SLs samples annealed at different temperatures for . The PL has been excited at with . (b) Reciprocal of the rise time of the PL at excited at with different excitation photon fluxes. (c) PL peak intensity at from SRN (circles) and Er:SRN/Si-SLs (squares), and PL peak intensity at from Er:SRN/Si-SLs (triangles) annealed at temperatures from . (d) PL decay curves measured at under identical pumping conditions for SRN/Si-SL and Er:SRN/Si-SLs samples with different layer thicknesses, as written in the legend.
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