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Sensitized erbium emission from silicon-rich nitride/silicon superlattice structures
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10.1063/1.2920435
/content/aip/journal/apl/92/18/10.1063/1.2920435
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/18/10.1063/1.2920435
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Figures

Image of FIG. 1.
FIG. 1.

(a) Bright-field TEM cross-sectional micrograph of a SRN/Si-SL structure. (b) High-resolution image of the rectangular region marked in (a) showing amorphous Si nc in the SRN layers, some of which are marked by arrows.

Image of FIG. 2.
FIG. 2.

(a) PL spectra for SRN/Si-SL (squares) and reference homogeneous SRN (circles) samples annealed at for . Both the PL spectra are excited at with optical power. (b) decay time of SRN/Si-SL (squares) and reference homogeneous SRN (circles) samples measured at different wavelengths.

Image of FIG. 3.
FIG. 3.

(a) Typical PL spectra of Er:SRN/Si-SLs samples annealed at different temperatures for . The PL has been excited at with . (b) Reciprocal of the rise time of the PL at excited at with different excitation photon fluxes. (c) PL peak intensity at from SRN (circles) and Er:SRN/Si-SLs (squares), and PL peak intensity at from Er:SRN/Si-SLs (triangles) annealed at temperatures from . (d) PL decay curves measured at under identical pumping conditions for SRN/Si-SL and Er:SRN/Si-SLs samples with different layer thicknesses, as written in the legend.

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/content/aip/journal/apl/92/18/10.1063/1.2920435
2008-05-07
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Sensitized erbium emission from silicon-rich nitride/silicon superlattice structures
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/18/10.1063/1.2920435
10.1063/1.2920435
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