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(a) Schematic structure of the SiN-based multilayer LEDs. (b) The cross-section TEM micrograph of the multilayer structure.
(a) The current density-voltage characteristics of the devices with different barrier layers under the forward bias condition. (b) Band offset as a function of barrier layers prepared by different . Inset shows the quantity plotted as a function of . is in .
EL spectra of the devices with different tunneling barrier layers measured (a) at an injection current of and (b) at a forward of , respectively.
EL intensity of the devices vs the applied voltage and the electrical input powers, respectively.
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