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Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices
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10.1063/1.2920819
/content/aip/journal/apl/92/18/10.1063/1.2920819
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/18/10.1063/1.2920819
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic structure of the SiN-based multilayer LEDs. (b) The cross-section TEM micrograph of the multilayer structure.

Image of FIG. 2.
FIG. 2.

(a) The current density-voltage characteristics of the devices with different barrier layers under the forward bias condition. (b) Band offset as a function of barrier layers prepared by different . Inset shows the quantity plotted as a function of . is in .

Image of FIG. 3.
FIG. 3.

EL spectra of the devices with different tunneling barrier layers measured (a) at an injection current of and (b) at a forward of , respectively.

Image of FIG. 4.
FIG. 4.

EL intensity of the devices vs the applied voltage and the electrical input powers, respectively.

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/content/aip/journal/apl/92/18/10.1063/1.2920819
2008-05-07
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/18/10.1063/1.2920819
10.1063/1.2920819
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