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Giant carrier mobility in single crystals of
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10.1063/1.2926662
/content/aip/journal/apl/92/18/10.1063/1.2926662
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/18/10.1063/1.2926662
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Hall resistivity as a function of the applied field for selected temperatures. The solid lines are fits to the two-carrier model, i.e., . Eq. (1). (b) The Hall coefficient as a function of the applied field.

Image of FIG. 2.
FIG. 2.

The Hall mobility for two types of carriers denoted by the open symbols. The nature of the carrier is denoted by the center +/− sign of the data point, i.e., + for holes and − for electrons. The resistivity (filled symbols) is denoted on the right vertical axis.

Image of FIG. 3.
FIG. 3.

Carrier concentrations of high and low mobility carriers as a function of temperature. The polycrystalline average of the magnetic susceptibility is denoted on the right axis. The solid line is the fit to narrow band small gap model, that yields and .

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/content/aip/journal/apl/92/18/10.1063/1.2926662
2008-05-09
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Giant carrier mobility in single crystals of FeSb2
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/18/10.1063/1.2926662
10.1063/1.2926662
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