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Organic light emitting diodes using a Ga:ZnO anode
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/content/aip/journal/apl/92/19/10.1063/1.2917565
2008-05-13
2015-05-04

Abstract

We report the application of galliumdoped zinc oxide (GZO) films as anodes in organic light emitting diodes(OLEDs). Pulsed laser deposited GZO films of differing Ga composition are examined. Bilayer OLEDs using GZO and indium tin oxide (ITO) anodes are compared. Relative to ITO, the GZO anodes have a slightly better sheet resistance and transparency in the visible spectral region. Device data suggest that GZO effectively injects holes into an aromatic triamine hole transporting layer. Indium-free anodes such as GZO are expected to improve OLED stability while lowering the cost per unit area, which is crucial for OLED based lighting applications.

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Scitation: Organic light emitting diodes using a Ga:ZnO anode
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/19/10.1063/1.2917565
10.1063/1.2917565
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