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Effect of molecular beam epitaxy growth conditions on the Bi content of
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10.1063/1.2918844
/content/aip/journal/apl/92/19/10.1063/1.2918844
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/19/10.1063/1.2918844
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

High resolution x-ray [004] scans for epilayers with Bi content of 1.4%, 5%, and 10%. The corresponding sample thicknesses are 152, 56, and , respectively. All samples show weak interference fringes.

Image of FIG. 2.
FIG. 2.

Typical AFM image of epilayer with Bi content of 3.6%. The sample is thick. Image shows a scan. The rms roughness is , with surface features elongated in the direction.

Image of FIG. 3.
FIG. 3.

The dependence of Bi content on growth conditions plotted as a function of the flux ratio. The symbols represent the experimental data and the lines are fits based on the proposed model. The solid circles (with Bi flux of ) and solid squares (with Bi flux of ) correspond to two groups of samples grown at the same temperatures and Bi fluxes, but with varying As fluxes. The samples represented by the open symbols (with As flux of and Bi flux of ) and solid triangles (with As flux of ) are all grown at the same As fluxes, but at different temperatures and Bi fluxes. The two solid lines cut off when the flux ratio reaches unity. Further reduction in As flux will cause Ga droplets to form.

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/content/aip/journal/apl/92/19/10.1063/1.2918844
2008-05-15
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of molecular beam epitaxy growth conditions on the Bi content of GaAs1−xBix
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/19/10.1063/1.2918844
10.1063/1.2918844
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