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Carrier multiplication in a PbSe nanocrystal and P3HT/PCBM tandem cell
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10.1063/1.2920477
/content/aip/journal/apl/92/19/10.1063/1.2920477
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/19/10.1063/1.2920477
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Device structure and associated energy diagram.

Image of FIG. 2.
FIG. 2.

(a) Open circuit voltage and short circuit current as a function of incident power in the polymer BHJ solar cell. (b) QE for the light biased and unbiased cases for the tandem cell device. (Inset: curve for the tandem device and the conventional BHJ device).

Image of FIG. 3.
FIG. 3.

Normalized QE obtained from the difference between the light bias and with no light bias. The data were multiplied by the absolute absorbance of the PbSe thin film and normalized to the average value from the long wavelength QE difference. The additional data points are taken from Ref. 12 (electrical carrier extraction from PbSe NQDs).

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/content/aip/journal/apl/92/19/10.1063/1.2920477
2008-05-14
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Carrier multiplication in a PbSe nanocrystal and P3HT/PCBM tandem cell
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/19/10.1063/1.2920477
10.1063/1.2920477
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