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Schematic of the method (a): an optical diffuser is placed on top of the photomask during UV exposure for light blurring; example of a calibration curve (b), resist heights generate by strips with different gaps [ strip width and variable gaps (micrometers)]. The reference is the full resist step height. The feature edges are at a distance of .
Profilometer scan (a) and scanning electron microscope micrographs [(b) and (c)], bird’s-eye view, of a sinusoidal thickness variation in photoresist and after RIE etching in silicon.
DRIE etched silicon microlens; top-view optical micrograph of photoresist (a), optical micrograph of lens (b), and profilometer scan of photoresist and lens (c).
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