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Stable ZnO thin film transistors by fast open air atomic layer deposition
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Schematic of the ALD coating head showing the gas channels and gas flow. The channels are wide with a spacing of . The coating width is approximately . is the oxidizing reactant, is the metal precursor, and is nitrogen. (b) film thickness for 250 ALD cycles as a function of residence time. The squares represent data from the spatial ALD system operated at . The circles represent data extracted from Ref. 11.

Image of FIG. 2.
FIG. 2.

Leakage current as a function of applied electric field for films grown at several temperatures. The 200 and films show low leakage and are distinctly better than the film.

Image of FIG. 3.
FIG. 3.

XRD of -thick ZnO layer with inset of ZnO. For the thicker sample, the primary peak is found at (100), while in thinner samples, the (002) peak becomes equally intense.

Image of FIG. 4.
FIG. 4.

(a) Double sweep transfer characteristics of a zinc oxide TFT showing no hysteresis at and . Linear and saturation mobility are 12.5 and respectively. (b) Threshold voltage shift under gate bias stress of for an unpassivated TFT, and one passivated with . The change in mobility over the is less than 5% for both samples.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Stable ZnO thin film transistors by fast open air atomic layer deposition