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Prepassivation surface treatment effects on pulsed and dc performance of high-electron-mobility transistors
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10.1063/1.2928236
/content/aip/journal/apl/92/19/10.1063/1.2928236
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/19/10.1063/1.2928236
/content/aip/journal/apl/92/19/10.1063/1.2928236
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/content/aip/journal/apl/92/19/10.1063/1.2928236
2008-05-13
2015-01-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Prepassivation surface treatment effects on pulsed and dc I-V performance of AlGaN∕GaN high-electron-mobility transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/19/10.1063/1.2928236
10.1063/1.2928236
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