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AFM images of samples (a) A and (b) B. The volume of the dots decrease as temperature rises. (c) and (e) are scans for the samples at the Ga edge and below it, (d) and (f) show scans at the As edge and below it. The contrast observed in all scans is directly related to the presence of Ga or As. The GaAs (220) diffraction peak is not shown for clarity.
(a) Angular scans of sample A yielding the dots size-lattice parameter relationship for different values. [(b) and (c)] QDs lateral width as function of . (d) and (e) show concentration profiles for all chemical elements as function of .
Concentration maps for all chemical elements present for QD samples grown at (A) and (B) .
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