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Very low transparency currents in double quantum well InGaAs semiconductor lasers with -doped resonant tunneling
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10.1063/1.2825465
/content/aip/journal/apl/92/2/10.1063/1.2825465
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/2/10.1063/1.2825465

Figures

Image of FIG. 1.
FIG. 1.

Electronic band structure, energy levels, and wave functions for -type doping located in GaAs away from two coupled QWs. The barrier between the wells is thick, the first QW is thick, and the second QW is thick. The calculations were carried out with injected carrier density of (a) and with no current injection (b).

Image of FIG. 2.
FIG. 2.

Threshold current density vs inverse cavity length for the broad-area DQW lasers with different -doping sheet concentration (M420 without , M572, M549, M550, and M551, with sheet carrier concentration of , , , and , accordingly).

Image of FIG. 3.
FIG. 3.

Threshold current density vs inverse cavity length of the broad-area DQW lasers with thick first QW and different second QWs (M555, M549, and M556, with 8.5, 9.5, and thick second QW, respectively) and doping with sheet concentration of .

Tables

Generic image for table
Table I.

Measured parameters for DQW lasers with thick first QW and with second QW and different values of sheet carrier concentration in the layer.

Generic image for table
Table II.

Measured parameters of different -doped DQW lasers, compared with the parameters of single QW lasers that were derived from the results published in Ref. 4 .

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/content/aip/journal/apl/92/2/10.1063/1.2825465
2008-01-14
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Very low transparency currents in double quantum well InGaAs semiconductor lasers with δ-doped resonant tunneling
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/2/10.1063/1.2825465
10.1063/1.2825465
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