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Electronic band structure, energy levels, and wave functions for -type doping located in GaAs away from two coupled QWs. The barrier between the wells is thick, the first QW is thick, and the second QW is thick. The calculations were carried out with injected carrier density of (a) and with no current injection (b).
Threshold current density vs inverse cavity length for the broad-area DQW lasers with different -doping sheet concentration (M420 without , M572, M549, M550, and M551, with sheet carrier concentration of , , , and , accordingly).
Threshold current density vs inverse cavity length of the broad-area DQW lasers with thick first QW and different second QWs (M555, M549, and M556, with 8.5, 9.5, and thick second QW, respectively) and doping with sheet concentration of .
Measured parameters for DQW lasers with thick first QW and with second QW and different values of sheet carrier concentration in the layer.
Measured parameters of different -doped DQW lasers, compared with the parameters of single QW lasers that were derived from the results published in Ref. 4 .
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