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Energy level alignment and injection barriers at spin injection contacts between and organic semiconductors
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Image of FIG. 1.

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FIG. 1.

Valence-band photoemission data of CuPc (left panel) and -6T (right panel) deposited onto contaminated films.

Image of FIG. 2.

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FIG. 2.

Core level photoemission data of CuPc (left panel, N core level) and -6T (right panel, S core level) deposited onto contaminated films.

Image of FIG. 3.

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FIG. 3.

Schematic energy level diagrams of contaminated interfaces between and the organic semiconductors CuPc and -6T.

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2008-01-14
2014-04-23

Abstract

We have determined the energy level alignment at interfaces between and two typical organic semiconductors, copper-phthalocyanine and -sexithiophene. thin films have been grown using pulsed laser deposition and subsequently ex situcleaned before the organic materials have been deposited. This procedure is often applied in the fabrication of organic devices. We show that under these conditions the interfaces are free from chemical interaction and characterized by a short range interface dipole and large charge injection barriers.

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Scitation: Energy level alignment and injection barriers at spin injection contacts between La0.7Sr0.3MnO3 and organic semiconductors
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/2/10.1063/1.2829391
10.1063/1.2829391
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