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Interface studies of ZnO nanowire transistors using low-frequency noise and temperature-dependent measurements
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10.1063/1.2830005
/content/aip/journal/apl/92/2/10.1063/1.2830005
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/2/10.1063/1.2830005
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Measured drain current noise spectrum of a SAND-based ZnO NWT at =0.2, 0.5, 0.8, and and =. (b) The and amplitude of current noise spectrum at plotted vs at a gate bias of .

Image of FIG. 2.
FIG. 2.

Measured and the amplitude of current noise spectrum plotted as a function of gate bias at a drain bias of for (a) and (b) ZnO/SAND.

Image of FIG. 3.
FIG. 3.

Temperature-dependent characteristics of (a) NWT and (b) ZnO/SAND NWT.

Image of FIG. 4.
FIG. 4.

(a) Arrhenius plot. (b) Channel activation energy, inferred from slope of Arrhenius plot vs gate voltage. (c) Energy band diagram at various gate biases .

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/content/aip/journal/apl/92/2/10.1063/1.2830005
2008-01-14
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Interface studies of ZnO nanowire transistors using low-frequency noise and temperature-dependent I-V measurements
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/2/10.1063/1.2830005
10.1063/1.2830005
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