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(a) A SEM image of the as-grown sample. The inset shows a SEM image of the mask pattern. (b) An XTEM image of a single GaAs nanostructure. The insets provide magnifications of the areas indicated by the dotted boxes. The inset scale bars correspond to . (c) A schematic illustration of the major facet evolution.
(a) Calculated GaAs surface energies of various orientations. (b) A schematic replication of Fig. 1(b). The parameters and variables used in Eqs. (1) and (2) are indicated. Due to the asymmetric shape, and (or ) are defined only with respect to the left side which is matched to the model. The bold dashed line represents ECS. (c) A plot of vs defined in Eq. (1).
Ratios of experimental and theoretical surface energies of various orientations to that of (110) in GaAs. is taken to be .
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