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Electronic structure of -passivated interfaces of (100)Ge with and
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10.1063/1.2831668
/content/aip/journal/apl/92/2/10.1063/1.2831668
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/2/10.1063/1.2831668
/content/aip/journal/apl/92/2/10.1063/1.2831668
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/content/aip/journal/apl/92/2/10.1063/1.2831668
2008-01-15
2014-10-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electronic structure of GeO2-passivated interfaces of (100)Ge with Al2O3 and HfO2
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/2/10.1063/1.2831668
10.1063/1.2831668
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