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Electronic structure of -passivated interfaces of (100)Ge with and
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10.1063/1.2831668
/content/aip/journal/apl/92/2/10.1063/1.2831668
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/2/10.1063/1.2831668
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) IPE/PC quantum yield as a function of photon energy measured in capacitors with indicated positive bias applied to the Au electrode. For comparison, results are also shown for a sample additionally oxidized at for (, filled squares), and a sample with passivation (, ◇). The inset shows a scheme of the observed electronic excitations. The arrows and indicate the onsets of direct optical transitions within the Ge crystal. (b) Determination of the PC/IPE spectral thresholds from the quantum yield power plots. Vertical lines indicate the spectral thresholds of electron IPE from the Ge VB and the oxide bandgap widths . The lines guide the eye.

Image of FIG. 2.
FIG. 2.

(a) IPE/PC quantum yield as a function of photon energy measured in capacitors with indicated negative bias applied to the Au electrode. For comparison, results are also shown for a sample additionally oxidized at for (, filled squares), and a sample with passivation (, ◇). The inset shows a diagram of the observed electronic excitations. (b) Determination of the PC/IPE spectral thresholds from the quantum yield power plots. Vertical lines indicate the spectral thresholds hole IPE from Ge CB into the oxide VB , and the oxide bandgap widths . The arrow indicates the onset of direct optical transitions within the Ge crystal. The lines guide the eye.

Image of FIG. 3.
FIG. 3.

(a) IPE/PC quantum yield as a function of photon energy measured in capacitors with positive (open symbols) and negative (filled symbols) bias on the Au electrode. The results are shown for the as deposited (circles) and additionally oxidized (; squares) insulating stacks. The insert illustrates the determination of the spectral thresholds of electron IPE from the Ge VB using plots. (b) Determination of the PC/IPE spectral thresholds from the yield power plots. The vertical lines indicate the spectral thresholds for hole IPE from the Ge CB into the oxide VB , and the oxide bandgap widths . The lines guide the eye.

Image of FIG. 4.
FIG. 4.

Energy band alignmant of (a) and (b) interfaces with indicated values of the energy parameters experimentally determined in the present work. The zero point of the energy scale is at the top of the Ge VB.

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/content/aip/journal/apl/92/2/10.1063/1.2831668
2008-01-15
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electronic structure of GeO2-passivated interfaces of (100)Ge with Al2O3 and HfO2
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/2/10.1063/1.2831668
10.1063/1.2831668
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