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[(a) and (b)] Top view SEM image and XRD pattern of the CdS nanowires prepared from the hydrothermal process, respectively. (c) TEM image of a single CdS nanowire. The inset is the corresponding SAED pattern. (d) HRTEM image of a single CdS nanowire.
(a) Schematic of the AFM measurement system. (b) Line profiles of topography (red) and output voltage (blue) scanned across CdS nanowires.
[(a) and (b)] Side view SEM and TEM images of a single CdS nanowire produced from the PVD process. (c) HRTEM image of a single CdS nanowire at the marked region of (b). The inset is the corresponding SAED pattern of the nanowire recorded from the marked region in (b).
[(a) and (b)] The topography and corresponding voltage output images of the nanowire arrays prepared from the PVD process, respectively. (c) Line profiles of topography (red) and output voltage (blue) scanned across CdS nanowires. [(d) and (e)] Contact between the AFM tip and a semiconductor CdS nanowire at two reversed local contact potentials (positive and negative), showing reverse- and forward-biased Schottky rectifying behavior, respectively. The process in (d) is to generate and preserve the charges/potential, and the process in (e) is to discharge the potential through a flow of electrons from the circuit under the driving of the piezoelectric potential.
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