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Ohmic contact formation on -type Ge
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10.1063/1.2831918
/content/aip/journal/apl/92/2/10.1063/1.2831918
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/2/10.1063/1.2831918

Figures

Image of FIG. 1.
FIG. 1.

measurement between a top and backside Ohmic contact on . The top contact consists of (solid, blue line), Al (dashed red line) or NiGe (dotted, black). The insertion of a thin layer clearly changes the contact behavior of Al from Schottky to Ohmic. contacts shows much better current conduction than NiGe.

Image of FIG. 2.
FIG. 2.

measurement between a top metal/ contact and the backside Ohmic contact on . Solid (blue) line for Al, dashed (red) line for Cr, dotted (black) line for Co, dotted-dashed (green) line for Au, and dotted-dotted-dashed (brown) line for Pt. Al, Cr, and Co form Ohmic contacts when a layer is inserted. Au and Pt stay rectifying.

Image of FIG. 3.
FIG. 3.

measurement between a top contact on and the backside Ohmic contact. The contact on is clearly rectifying.

Tables

Generic image for table
Table I.

Comparison of current density and resistance measured between top and back contacts at and between two top contacts at , respectively, for different contacts on -Ge.

Generic image for table
Table II.

Metal work function for different metals from Ref. 10 and the barrier height calculated from measurements. For , , and contacts, no barrier was observed and, therefore, the barrier height is at least smaller than .

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/content/aip/journal/apl/92/2/10.1063/1.2831918
2008-01-14
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ohmic contact formation on n-type Ge
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/2/10.1063/1.2831918
10.1063/1.2831918
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