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High photoexcited carrier multiplication by charged InAs dots in resonant tunneling diode
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10.1063/1.2832368
/content/aip/journal/apl/92/2/10.1063/1.2832368
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/2/10.1063/1.2832368
/content/aip/journal/apl/92/2/10.1063/1.2832368
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/content/aip/journal/apl/92/2/10.1063/1.2832368
2008-01-15
2014-09-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High photoexcited carrier multiplication by charged InAs dots in AlAs∕GaAs∕AlAs resonant tunneling diode
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/2/10.1063/1.2832368
10.1063/1.2832368
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