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Photoluminescence from a single InGaAs epitaxial quantum rod
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10.1063/1.2832635
/content/aip/journal/apl/92/2/10.1063/1.2832635
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/2/10.1063/1.2832635
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Cross-sectional TEM image of a single quantum rod grown by submonolayer close stacking of InAs and GaAs (along the [110] direction).

Image of FIG. 2.
FIG. 2.

Low temperature spectra of an ensemble of quantum rods in the range of the ground state emission for different values of excitation power.

Image of FIG. 3.
FIG. 3.

Microphotoluminescence spectra as a function of the excitation power revealing emission lines corresponding to exciton and biexciton radiative recombinations in a single quantum rod.

Image of FIG. 4.
FIG. 4.

Integrated intensity dependence of both and lines of a single quantum rod observed in the spectra (symbols) and calculated according to the Eqs. (3) and (4) for (dashed lines) and (continuous lines).

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/content/aip/journal/apl/92/2/10.1063/1.2832635
2008-01-14
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoluminescence from a single InGaAs epitaxial quantum rod
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/2/10.1063/1.2832635
10.1063/1.2832635
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