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Cluster related hole traps with enhanced-field-emission—the source for long term annealing in hadron irradiated Si diodes
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10.1063/1.2832646
/content/aip/journal/apl/92/2/10.1063/1.2832646
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/2/10.1063/1.2832646
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

TSC spectra after forward injection on: (a) neutron irradiated EPI-DO diode after different annealing times at , ; (b) neutron irradiated MCz diode after different annealing times at , ; (c) irradiated EPI-DO diode, different .

Image of FIG. 2.
FIG. 2.

TSC spectra for different applied biases on neutron irradiated EPI-DO after at —experimental (scatters) and calculated (3D-PF lines).

Image of FIG. 3.
FIG. 3.

Change of determined at from measurements (open symbols) and calculated change of due to the negative space charge introduced by , , and traps (filled symbols).

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/content/aip/journal/apl/92/2/10.1063/1.2832646
2008-01-14
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Cluster related hole traps with enhanced-field-emission—the source for long term annealing in hadron irradiated Si diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/2/10.1063/1.2832646
10.1063/1.2832646
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