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Controlling domain wall pinning in planar nanowires by selecting domain wall type and its application in a memory concept
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10.1063/1.2832771
/content/aip/journal/apl/92/2/10.1063/1.2832771
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/2/10.1063/1.2832771
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Figures

Image of FIG. 1.
FIG. 1.

Micromagnetic simulations showing the behavior of domain walls with different magnetization configurations. (a) The formation of a head-to-head transverse wall with magnetization pointing upwards and (b) pinning of the wall at the notch after injection of the wall from the pad at . (c) The formation of a head-to-head transverse wall with magnetization pointing downward and (d) the domain structure at after injection of the wall from the pad, the wall has propagated past the notch and swept out of the wire.

Image of FIG. 2.
FIG. 2.

Scanning electron micrograph example of a triangular notch structure in a planar nanowire and MOKE hysteresis loops measured with the laser spot located after the notch—the static transverse fields applied during the measurements are indicated.

Image of FIG. 3.
FIG. 3.

The effect of transverse field upon the magnitude of the axial depinning field from the notch for head-to-head (solid symbols) and tail-to-tail (open symbols) domain structures.

Image of FIG. 4.
FIG. 4.

A concept for a multibit memory cell. In addition to the two oppositely magnetized saturated states, further states can be obtained depending upon the direction of magnetization and the pinning location of the domain wall which is determined by the orientation of the wall magnetization (indicated by the vertical arrows) that has been selected.

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/content/aip/journal/apl/92/2/10.1063/1.2832771
2008-01-16
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Controlling domain wall pinning in planar nanowires by selecting domain wall type and its application in a memory concept
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/2/10.1063/1.2832771
10.1063/1.2832771
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