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Infrared reflectivity spectra of three CdO samples with carrier concentrations of (a) , (b) , and (c) (open circles). In each case, the simulation based on the two-oscillator dielectric function is shown (solid lines).
The plasma frequency of the CdO samples determined from infrared reflectivity measurements plotted as a function of carrier concentration (filled circles) together with three simulations of the plasma frequency calculated with a bandgap of and band-edge effective mass values of , , and (lines). The inset shows the density of states integrated effective mass as a function of carrier concentration.
The ultraviolet/visible spectra of three CdO samples with carrier concentrations of (a) , (b) , and (c) . The position of the fundamental optical transition (from valence band to Fermi level) is seen to increase with carrier concentration. This trend is further highlighted in the inset where the spectra of all samples considered in this work are shown.
The position of the fundamental optical transition plotted as a function of carrier concentration for the CdO samples together with simulations calculated using a nonparabolic two-band conduction band with a band-edge effective mass of and bandgaps of 2.14, 2.16, and .
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