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Schematics of the MR medium showing the magnetization of the nanowires for (a) an applied magnetic field (a) smaller and (b) larger than an exchange bias field (c) schematics of deposition of nanowires on the outer step edges of a vicinal surface; the beam is directed at a shallow angle along the descending step direction.
(a) derivative AFM image of an array of bunched steps on a miscut Si(111) surface. Light stripes are flat Si(111) terraces while the darker regions correspond to the bunched steps; the inset is a schematic along the direction of a miscut marked in (a) by an arrow. (b) AFM image of a planar array of Ag nanowires grown at . (c) A line profile along the direction of a miscut marked in (b) and a schematic of an underlying Si(111) bunched substrate. (d) AFM image of Co nanowires deposited on miscut -plane .
(a) Hysteresis loop simulation for a Ni film separated into two nanowires . The insets are the vector maps for different external fields; the cross section is along plane [Fig. 1(a)] perpendicular to the nanowire length. (b) Simulated domain wall width as a function of bias field for a domain wall between neighboring nanowires having pinned and unpinned magnetic moments. A bias field applied to the pinned nanowire is .
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