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The schematic device structure of VM-LEDs using the proposed Sn-based metal substrate technology at some specific processing stages. (a) Sample at the patterned LLO processing stage. (b) Sample at the Ohmic contact processing stage. (c) The schematic cross section of a regular GaN-based LED. Note that device structures shown in the present figure were not in scale.
Scanning electron microscope (SEM) and optical microscope (OM) images of samples at some processing states. (a) Top view of the patterned Sn-based metal substrate before the removal of nickel metal frames. (b) SEM image of the cross-sectional structure of the sample after the reflow process. (c) Top view of the exposed epi-GaN layers after patterned LLO process. (d) OM image of the exposed -GaN after the autoremoval of the nickel metal frames.
Comparison of typical forward current-voltage characteristics of VM-LEDs and regular LEDs. The inset shows the reverse current characteristic of VM and regular LEDs
Comparison of typical characteristics of VM-LEDs and regular LEDs. The inset shows the comparison of the peak wavelength dependence on injection current and light emission images at of the VM and regular LED.
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