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Contact resistance of dibenzotetrathiafulvalene-based organic transistors with metal and organic electrodes
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FIG. 1.

Analysis of contact resistance of DBTTF transistors. (a) Gate voltage dependence of the contact resistance for bottom-contact transistors with various electrodes. (b) Work function dependence of the mobility (squares) and the contact resistance (triangles) at .

Image of FIG. 2.

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FIG. 2.

(a) Interfacial energy diagram of DBTTF/Au and (b) reduction of hole injection barrier difference from the metal work function due to the interfacial vacuum energy shift .

Image of FIG. 3.

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FIG. 3.

(a) Output and (b) transfer characteristics of a thin-film (DBTTF)(TCNQ) transistor with (TTF)(TCNQ) electrodes, measured in air.

Image of FIG. 4.

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FIG. 4.

(a) AFM image and (b) XRD of an evaporated (TTF)(TCNQ) thin film.

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/content/aip/journal/apl/92/2/10.1063/1.2834374
2008-01-16
2014-04-24

Abstract

Thin-film transistors of dibenzotetrathiafulvalene (DBTTF) are investigated by changing the source and drain (S/D) electrodematerials. Not only the mobility but also the contact resistance, estimated from the transfer line method, changes depending on the metalwork functions. Nonetheless, S/D electrodes made of a metallic organic charge-transfer salt, (tetrathiafulvalene) (tetracyanoquinodimethane) [(TTF)(TCNQ)] exhibits much smaller contact resistance, which is attributed to small potential shift on the organic/organic interface compared with the organic/metal interface. A thin film of (DBTTF)(TCNQ) works as an active layer of air-stable -channel organic transistors when (TTF)(TCNQ) is used as the S/D electrodes.

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Scitation: Contact resistance of dibenzotetrathiafulvalene-based organic transistors with metal and organic electrodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/2/10.1063/1.2834374
10.1063/1.2834374
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