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Characterization of AlN metal-semiconductor-metal diodes in the spectral range of : Photoemission assessments
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10.1063/1.2834701
/content/aip/journal/apl/92/2/10.1063/1.2834701
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/2/10.1063/1.2834701
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic representation of the device layer structure and (b) photograph of the AlN MSM photodiode mounted and insulated on a teflon plate inside the manipulation stages holder together with the silicon photodiode reference detector.

Image of FIG. 2.
FIG. 2.

characteristics of AlN MSM photodiode at room temperature. The inset shows the absolute signal (pA) as a function of time at ( radiant power).

Image of FIG. 3.
FIG. 3.

Absolute responsivity (mA/W) of AlN MSM at bias between 44 and . The inset shows the absolute signal (pA) between 44 and .

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/content/aip/journal/apl/92/2/10.1063/1.2834701
2008-01-15
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization of AlN metal-semiconductor-metal diodes in the spectral range of 44–360nm: Photoemission assessments
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/2/10.1063/1.2834701
10.1063/1.2834701
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