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(a) scan of TiN thin film on Si(001) substrate, the inset is the scan pattern of both the TiN film and Si substrate (111) pole. (b) scan of bcc on TiN buffered Si(001) substrate. The inset is scan pattern of bcc and Si substrate (011) pole.
(a) Surface morphology of TiN thin film deposited on Si(001) substrate at . [(b)–(d)] Surface morphology of thin film deposited at 300, 450, and , respectively. The image size is for (b) and for (c) and (d).
In-plane and out-of-plane lattice parameters for thin film deposited at different temperatures.
(a) Magnetization hysteresis loops of film along the  (circle) and  (diamond) axis of . [(b)–(d)] Hysteresis loop of 100, 30, and films along the  axis of , respectively. All the films were deposited at substrate temperature.
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