1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Growth and physical property of epitaxial thin film on Si substrate via TiN buffer
Rent:
Rent this article for
USD
10.1063/1.2834706
/content/aip/journal/apl/92/2/10.1063/1.2834706
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/2/10.1063/1.2834706
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) scan of TiN thin film on Si(001) substrate, the inset is the scan pattern of both the TiN film and Si substrate (111) pole. (b) scan of bcc on TiN buffered Si(001) substrate. The inset is scan pattern of bcc and Si substrate (011) pole.

Image of FIG. 2.
FIG. 2.

(a) Surface morphology of TiN thin film deposited on Si(001) substrate at . [(b)–(d)] Surface morphology of thin film deposited at 300, 450, and , respectively. The image size is for (b) and for (c) and (d).

Image of FIG. 3.
FIG. 3.

In-plane and out-of-plane lattice parameters for thin film deposited at different temperatures.

Image of FIG. 4.
FIG. 4.

(a) Magnetization hysteresis loops of film along the [100] (circle) and [110] (diamond) axis of . [(b)–(d)] Hysteresis loop of 100, 30, and films along the [100] axis of , respectively. All the films were deposited at substrate temperature.

Loading

Article metrics loading...

/content/aip/journal/apl/92/2/10.1063/1.2834706
2008-01-15
2014-04-19
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth and physical property of epitaxial Co70Fe30 thin film on Si substrate via TiN buffer
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/2/10.1063/1.2834706
10.1063/1.2834706
SEARCH_EXPAND_ITEM