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(a) Schematic diagram of mist deposition module and (b) schematic configuration of an atomizer used in mist deposition.
Cross-sectional TEM images of NQD layers of (a) 1 ML and of (b) 5 ML deposited over poly(3,4 ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT/PSS)-coated silicon substrates. Above the NQD layer is the glue layer (M-Bond610, Structure Probe, Inc.) used during the preparation of cross-sectional TEM samples.
Current density and radiance power vs applied voltage for a red QD-LED fabricated with mist-deposition process. The insets show the emission spectrum and image of a working LED fabricated by the technique of mist deposition. The LED was forwarded bias at , corresponding to a photometric brightness of .
Fluorescent image of a matrix of alternating pixels composed of diameter CdSe(ZnS) NQDs (green) and diameter NQDs (red) under UV illumination. (b) Normalized PL spectra of patterned NQD films.
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