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(a) XRD patterns of ZnO films deposited on substrates at room temperature. The inset shows the XPS spectra of ZnO films for Zn region and (b) cross-sectional SEM image of the structure.
Typical characteristics of RRAM device cell based on the capacitor.
Resistance evolution of LRS and HRS of capacitor in . The inset shows the resistive statistics for LRS and HRS.
The conducting mechanism is Ohmic behavior in double logarithmic plot. The inset shows the conducting mechanism of HRS in high electric field is Poole-Frenkel emission by curve fitting.
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