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Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications
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10.1063/1.2834852
/content/aip/journal/apl/92/2/10.1063/1.2834852
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/2/10.1063/1.2834852
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) XRD patterns of ZnO films deposited on substrates at room temperature. The inset shows the XPS spectra of ZnO films for Zn region and (b) cross-sectional SEM image of the structure.

Image of FIG. 2.
FIG. 2.

Typical characteristics of RRAM device cell based on the capacitor.

Image of FIG. 3.
FIG. 3.

Resistance evolution of LRS and HRS of capacitor in . The inset shows the resistive statistics for LRS and HRS.

Image of FIG. 4.
FIG. 4.

The conducting mechanism is Ohmic behavior in double logarithmic plot. The inset shows the conducting mechanism of HRS in high electric field is Poole-Frenkel emission by curve fitting.

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/content/aip/journal/apl/92/2/10.1063/1.2834852
2008-01-16
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/2/10.1063/1.2834852
10.1063/1.2834852
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