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(a) Schematic cross section of a typical three terminal device with ; (b) hysteresis characteristics of source and drain contact pads as determined from low temperature MOKE measurements.
(a) Measured collector terminal current vs applied magnetic field for a device biased at . Data are shown for both ferromagnetic (FM) and nonmagnetic (NM) central contact ; (b) measured as a function of collector terminal voltage at for the same device. The line shows the theoretically estimated values for under the same experimental conditions. A schematic of a potential multiterminal spin-based memory device is shown in the inset.
(a) Estimated current spin polarization (left axis) and enhancement factor (right axis) vs measured at ; (b) enhancement factor vs normalized collector current for various width devices at ; (c) vs device widths for various levels of normalized carrier extraction at .
Deviation from equilibrium electrochemical potential difference between spin-up and spin-down electrons are plotted for (a) and (b) devices at .
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